TY - JOUR A2 - Wagner, Markus R. AU - Pham, Duy Phong AU - Nguyen, Huu Truong AU - Phan, Bach Thang AU - Cao, Thi My Dung AU - Hoang, Van Dung AU - Dao, Vinh Ai AU - Yi, Junsin AU - Tran, Cao Vinh PY - 2014 DA - 2014/12/28 TI - In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells SP - 971528 VL - 2014 AB - Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO) to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells. SN - 1687-8108 UR - https://doi.org/10.1155/2014/971528 DO - 10.1155/2014/971528 JF - Advances in Condensed Matter Physics PB - Hindawi Publishing Corporation KW - ER -